In Situ Observation of Voltage-Induced Multilevel Resistive Switching in Solid Electrolyte Memory

In Situ Observation of Voltage-Induced Multilevel Resistive Switching in Solid Electrolyte Memory

Solid electrolyte memories utilizing voltage‐induced resistance change display the capability of multilevel switching, but understanding of the microscopic switching mechanism has been left incomplete. Here, in situ TEM observation of voltage‐induced changes in the microstructure of a solid electrol...

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Veröffentlicht in:Advanced materials (Weinheim) 2011-08, Vol.23 (29), p.3272-3277
Hauptverfasser: Choi, Sang-Jun, Park, Gyeong-Su, Kim, Ki-Hong, Cho, Soohaeng, Yang, Woo-Young, Li, Xiang-Shu, Moon, Jung-Hwan, Lee, Kyung-Jin, Kim, Kinam
Format: Artikel
Sprache:eng
Schlagworte:
Copper - chemistry
Electricity
Electrodes
Electrolytes - chemistry
filament model
Filaments
Microstructure
Multilevel
mutlilevel resistance state
Nanostructure
Nanostructures - chemistry
RE-RAM
resistive switching effect
Silicon Dioxide - chemistry
solid electrolyte resistive switching memory
Solid electrolytes
Switching
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Zusammenfassung:Solid electrolyte memories utilizing voltage‐induced resistance change display the capability of multilevel switching, but understanding of the microscopic switching mechanism has been left incomplete. Here, in situ TEM observation of voltage‐induced changes in the microstructure of a solid electrolyte memory is reported, revealing that the multilevel switching originates from the growth of multiple conducting filaments with nanometer‐sized diameter and spacing.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201100507