Controlled Growth of Self-Organized Hexagonal Arrays of Metallic Nanorods Using Template-Assisted Glancing Angle Deposition for Superhydrophobic Applications

The fabrication of controlled, self-organized, highly ordered tungsten and aluminum nanorods was accomplished via the aluminum lattice template-assisted glancing angle sputtering technique. The typical growth mechanism of traditional glancing angle deposition technique was biased by self-organized a...

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Veröffentlicht in:ACS applied materials & interfaces 2011-07, Vol.3 (7), p.2332-2340
Hauptverfasser: Kannarpady, Ganesh K, Khedir, Khedir R, Ishihara, Hidetaka, Woo, Justin, Oshin, Olumide D, Trigwell, Steve, Ryerson, Charles, Biris, Alexandru S
Format: Artikel
Sprache:eng
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Zusammenfassung:The fabrication of controlled, self-organized, highly ordered tungsten and aluminum nanorods was accomplished via the aluminum lattice template-assisted glancing angle sputtering technique. The typical growth mechanism of traditional glancing angle deposition technique was biased by self-organized aluminum lattice seeds resulting in superior quality nanorods in terms of size control, distribution, and long range order. The morphology, size, and distribution of the nanorods were highly controlled by the characteristics of the template seeds indicating the ability to obtain metallic nanorods with tunable distributions and morphologies that can be grown to suit a particular application. Water wettability of hexagonally arranged tungsten and aluminum nanorods was studied after modifying their surface with 5 nm of Teflon AF 2400, as an example, to exhibit the significance of such a controlled growth of metallic nanorods. This facile and scalable approach to generate nano seeds to guide GLAD, with nano seeds fabricated by anodic oxidization of aluminum followed by chemical etching, for the growth of highly ordered nanorods could have significant impact in a wide range of applications such as anti-icing coating, sensors, super capacitors, and solar cells.
ISSN:1944-8244
1944-8252
DOI:10.1021/am200251n