Direct Evidence of Secondary Recoiled Nuclei From High Energy Protons

The production of secondary recoiled particles from interactions between high energy protons and microelectronics devices was investigated. By using NAND Flash memories, we were able to directly obtain analog information on recoil characteristics. While our results qualitatively confirm the role of...

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Veröffentlicht in:	IEEE transactions on nuclear science 2008-12, Vol.55 (6), p.2904-2913
Hauptverfasser:	Cellere, G., Paccagnella, A., Visconti, A., Beltrami, S., Schwank, J., Shaneyfelt, M., Lambert, D., Paillet, P., Ferlet-Cavrois, V., Baggio, J., Harboe-Sorensen, R., Blackmore, E., Virtanen, A., Fuochi, P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Computer simulation Electron accelerators Energy (nuclear) Flash memory (computers) Floating gate memories high energy protons Ion accelerators Ionizing radiation Laboratories Mathematical models Microelectronics Monte Carlo methods Nuclear reactions Particle production Proton accelerators Random access memory Reactions (nuclear) Recoil single event effects space radiation Tungsten X-rays
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Zusammenfassung:	The production of secondary recoiled particles from interactions between high energy protons and microelectronics devices was investigated. By using NAND Flash memories, we were able to directly obtain analog information on recoil characteristics. While our results qualitatively confirm the role of nuclear reactions, in particular of those with tungsten, a quantitative model based on Monte Carlo and device-level simulations cannot describe the observed results in terms of recoils from proton-W reactions.
ISSN:	0018-9499 1558-1578
DOI:	10.1109/TNS.2008.2007799