Schottky Barrier Diode Circuits in Silicon for Future Millimeter-Wave and Terahertz Applications
This paper presents Schottky barrier diode circuits fully integrated in a 0.13- mum SiGe BiCMOS process technology. A subharmonically pumped upconverter and a frequency doubler are demonstrated that operate beyond 100 GHz without the need of external components. The upconverter has a size of 430 tim...
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| Veröffentlicht in: | IEEE transactions on microwave theory and techniques 2008-02, Vol.56 (2), p.364-371 |
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| container_title | IEEE transactions on microwave theory and techniques |
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| creator | Pfeiffer, U.R. Mishra, C. Rassel, R.M. Pinkett, S. Reynolds, S.K. |
| description | This paper presents Schottky barrier diode circuits fully integrated in a 0.13- mum SiGe BiCMOS process technology. A subharmonically pumped upconverter and a frequency doubler are demonstrated that operate beyond 100 GHz without the need of external components. The upconverter has a size of 430 times 780 mum 2 including on-chip matching elements and bond pads. It has a conversion gain of - 6 to - 7 dB from 100 to 120 GHz. The upconverter achieves a high single-sideband saturated output power of - 4 dBm from 100 to 120 GHz and a high linearity with a 1-dB compression point of - 6 dBm. The frequency doubler has a size of 360 times 500 mum 2 and can deliver up to 2.5 dBm at 110 GHz. |
| doi_str_mv | 10.1109/TMTT.2007.914656 |
| format | Article |
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A subharmonically pumped upconverter and a frequency doubler are demonstrated that operate beyond 100 GHz without the need of external components. The upconverter has a size of 430 times 780 mum 2 including on-chip matching elements and bond pads. It has a conversion gain of - 6 to - 7 dB from 100 to 120 GHz. The upconverter achieves a high single-sideband saturated output power of - 4 dBm from 100 to 120 GHz and a high linearity with a 1-dB compression point of - 6 dBm. The frequency doubler has a size of 360 times 500 mum 2 and can deliver up to 2.5 dBm at 110 GHz.</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.2007.914656</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Barriers ; BiCMOS integrated circuits ; Circuit properties ; Circuits ; Compressing ; Design. Technologies. Operation analysis. Testing ; Diodes ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronics ; Exact sciences and technology ; Frequency ; Frequency doubler ; Frequency doublers ; Germanium silicon alloys ; Integrated circuit technology ; Integrated circuits ; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits ; Microwaves ; Millimeter wave circuits ; Millimeter wave integrated circuits ; Millimeter wave technology ; millimeter waves ; power generation ; Schottky barrier diodes (SBDs) ; Schottky barriers ; Schottky diodes ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Signal convertors ; Silicon germanides ; Silicon germanium ; silicon germanium (SiGe) ; subharmonic mixer (SHM) ; terahertz ; Upconverters</subject><ispartof>IEEE transactions on microwave theory and techniques, 2008-02, Vol.56 (2), p.364-371</ispartof><rights>2008 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2008</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c383t-a6e364cf7fc62a49b611dd19e10f447e16b6a54832bacb3052f1522f126419793</citedby><cites>FETCH-LOGICAL-c383t-a6e364cf7fc62a49b611dd19e10f447e16b6a54832bacb3052f1522f126419793</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4435094$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4435094$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20056607$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Pfeiffer, U.R.</creatorcontrib><creatorcontrib>Mishra, C.</creatorcontrib><creatorcontrib>Rassel, R.M.</creatorcontrib><creatorcontrib>Pinkett, S.</creatorcontrib><creatorcontrib>Reynolds, S.K.</creatorcontrib><title>Schottky Barrier Diode Circuits in Silicon for Future Millimeter-Wave and Terahertz Applications</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>This paper presents Schottky barrier diode circuits fully integrated in a 0.13- mum SiGe BiCMOS process technology. A subharmonically pumped upconverter and a frequency doubler are demonstrated that operate beyond 100 GHz without the need of external components. The upconverter has a size of 430 times 780 mum 2 including on-chip matching elements and bond pads. It has a conversion gain of - 6 to - 7 dB from 100 to 120 GHz. The upconverter achieves a high single-sideband saturated output power of - 4 dBm from 100 to 120 GHz and a high linearity with a 1-dB compression point of - 6 dBm. The frequency doubler has a size of 360 times 500 mum 2 and can deliver up to 2.5 dBm at 110 GHz.</description><subject>Applied sciences</subject><subject>Barriers</subject><subject>BiCMOS integrated circuits</subject><subject>Circuit properties</subject><subject>Circuits</subject><subject>Compressing</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Diodes</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Frequency</subject><subject>Frequency doubler</subject><subject>Frequency doublers</subject><subject>Germanium silicon alloys</subject><subject>Integrated circuit technology</subject><subject>Integrated circuits</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>Microwaves</subject><subject>Millimeter wave circuits</subject><subject>Millimeter wave integrated circuits</subject><subject>Millimeter wave technology</subject><subject>millimeter waves</subject><subject>power generation</subject><subject>Schottky barrier diodes (SBDs)</subject><subject>Schottky barriers</subject><subject>Schottky diodes</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Signal convertors</subject><subject>Silicon germanides</subject><subject>Silicon germanium</subject><subject>silicon germanium (SiGe)</subject><subject>subharmonic mixer (SHM)</subject><subject>terahertz</subject><subject>Upconverters</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kc1LXDEUxYNUcKrdF7oJQuvqTZOX76UdvwpKF77SZZrJ3IfRNy9jkifoX2-GERdddHMvl_s7Bw4Hoc-UzCkl5nt303XzlhA1N5RLIffQjAqhGiMV-YBmhFDdGK7JAfqY8309uSB6hv7e-rtYysMz_uFSCpDwWYgrwIuQ_BRKxmHEt2EIPo64jwlfTGVKgG_CMIQ1FEjNH_cE2I0r3EFyd5DKCz7dbKrClRDHfIT2ezdk-PS2D9Hvi_NucdVc_7r8uTi9bjzTrDROApPc96r3snXcLCWlqxU1QEnPuQIql9IJrlm7dH7JiGh7Kto6WsmpUYYdopOd7ybFxwlyseuQPQyDGyFO2WpV82om2kp--y_JuGCEK1HB43_A-zilsaawWrZUE6a2bmQH-RRzTtDbTQprl54tJXbbjN02Y7fN2F0zVfL1zddl74Y-udGH_K6rqJCSqMp92XEBAN7fnDNBDGevm7OV7Q</recordid><startdate>20080201</startdate><enddate>20080201</enddate><creator>Pfeiffer, U.R.</creator><creator>Mishra, C.</creator><creator>Rassel, R.M.</creator><creator>Pinkett, S.</creator><creator>Reynolds, S.K.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Testing</topic><topic>Diodes</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Frequency</topic><topic>Frequency doubler</topic><topic>Frequency doublers</topic><topic>Germanium silicon alloys</topic><topic>Integrated circuit technology</topic><topic>Integrated circuits</topic><topic>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</topic><topic>Microwaves</topic><topic>Millimeter wave circuits</topic><topic>Millimeter wave integrated circuits</topic><topic>Millimeter wave technology</topic><topic>millimeter waves</topic><topic>power generation</topic><topic>Schottky barrier diodes (SBDs)</topic><topic>Schottky barriers</topic><topic>Schottky diodes</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Signal convertors</topic><topic>Silicon germanides</topic><topic>Silicon germanium</topic><topic>silicon germanium (SiGe)</topic><topic>subharmonic mixer (SHM)</topic><topic>terahertz</topic><topic>Upconverters</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Pfeiffer, U.R.</creatorcontrib><creatorcontrib>Mishra, C.</creatorcontrib><creatorcontrib>Rassel, R.M.</creatorcontrib><creatorcontrib>Pinkett, S.</creatorcontrib><creatorcontrib>Reynolds, S.K.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Pfeiffer, U.R.</au><au>Mishra, C.</au><au>Rassel, R.M.</au><au>Pinkett, S.</au><au>Reynolds, S.K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Schottky Barrier Diode Circuits in Silicon for Future Millimeter-Wave and Terahertz Applications</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>2008-02-01</date><risdate>2008</risdate><volume>56</volume><issue>2</issue><spage>364</spage><epage>371</epage><pages>364-371</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>This paper presents Schottky barrier diode circuits fully integrated in a 0.13- mum SiGe BiCMOS process technology. A subharmonically pumped upconverter and a frequency doubler are demonstrated that operate beyond 100 GHz without the need of external components. The upconverter has a size of 430 times 780 mum 2 including on-chip matching elements and bond pads. It has a conversion gain of - 6 to - 7 dB from 100 to 120 GHz. The upconverter achieves a high single-sideband saturated output power of - 4 dBm from 100 to 120 GHz and a high linearity with a 1-dB compression point of - 6 dBm. The frequency doubler has a size of 360 times 500 mum 2 and can deliver up to 2.5 dBm at 110 GHz.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TMTT.2007.914656</doi><tpages>8</tpages></addata></record> |
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| subjects | Applied sciences Barriers BiCMOS integrated circuits Circuit properties Circuits Compressing Design. Technologies. Operation analysis. Testing Diodes Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Frequency Frequency doubler Frequency doublers Germanium silicon alloys Integrated circuit technology Integrated circuits Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwaves Millimeter wave circuits Millimeter wave integrated circuits Millimeter wave technology millimeter waves power generation Schottky barrier diodes (SBDs) Schottky barriers Schottky diodes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Signal convertors Silicon germanides Silicon germanium silicon germanium (SiGe) subharmonic mixer (SHM) terahertz Upconverters |
| title | Schottky Barrier Diode Circuits in Silicon for Future Millimeter-Wave and Terahertz Applications |
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