Schottky Barrier Diode Circuits in Silicon for Future Millimeter-Wave and Terahertz Applications
This paper presents Schottky barrier diode circuits fully integrated in a 0.13- mum SiGe BiCMOS process technology. A subharmonically pumped upconverter and a frequency doubler are demonstrated that operate beyond 100 GHz without the need of external components. The upconverter has a size of 430 tim...
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Veröffentlicht in: | IEEE transactions on microwave theory and techniques 2008-02, Vol.56 (2), p.364-371 |
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Sprache: | eng |
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Zusammenfassung: | This paper presents Schottky barrier diode circuits fully integrated in a 0.13- mum SiGe BiCMOS process technology. A subharmonically pumped upconverter and a frequency doubler are demonstrated that operate beyond 100 GHz without the need of external components. The upconverter has a size of 430 times 780 mum 2 including on-chip matching elements and bond pads. It has a conversion gain of - 6 to - 7 dB from 100 to 120 GHz. The upconverter achieves a high single-sideband saturated output power of - 4 dBm from 100 to 120 GHz and a high linearity with a 1-dB compression point of - 6 dBm. The frequency doubler has a size of 360 times 500 mum 2 and can deliver up to 2.5 dBm at 110 GHz. |
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ISSN: | 0018-9480 1557-9670 |
DOI: | 10.1109/TMTT.2007.914656 |