Optical and Structural Properties of InGaNaAlGaN Ultraviolet Light-Emitting Diodes

We fabricated and investigated the performances of InGaN-AlGaN ultraviolet (UV) light-emitting diodes (LEDs) emitting at 380 nm. The output power of a conventional LED, a patterned sapphire substrate LED (PSS LED), and a PSS flip-chip LED (PSS FCLED) were about 0.94, 1.86, and 5.18 mW, respectively,...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE photonics technology letters 2008-01, Vol.20 (23)
Hauptverfasser:	Kim, Sang-Mook, Kim, Jae Bum, Jhin, Junggeun, Baek, Jong Hyeob, Lee, In Hwan, Jung, Gun Young
Format:	Artikel
Sprache:	eng
Schlagworte:	Emittance Injection current Light-emitting diodes Optical properties Photonics Simulation Ultraviolet Wavelengths
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!