Optical and Structural Properties of InGaNaAlGaN Ultraviolet Light-Emitting Diodes

Optical and Structural Properties of InGaNaAlGaN Ultraviolet Light-Emitting Diodes

We fabricated and investigated the performances of InGaN-AlGaN ultraviolet (UV) light-emitting diodes (LEDs) emitting at 380 nm. The output power of a conventional LED, a patterned sapphire substrate LED (PSS LED), and a PSS flip-chip LED (PSS FCLED) were about 0.94, 1.86, and 5.18 mW, respectively,...

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Veröffentlicht in:IEEE photonics technology letters 2008-01, Vol.20 (23)
Hauptverfasser: Kim, Sang-Mook, Kim, Jae Bum, Jhin, Junggeun, Baek, Jong Hyeob, Lee, In Hwan, Jung, Gun Young
Format: Artikel
Sprache:eng
Schlagworte:
Emittance
Injection current
Light-emitting diodes
Optical properties
Photonics
Simulation
Ultraviolet
Wavelengths
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Beschreibung
Zusammenfassung:We fabricated and investigated the performances of InGaN-AlGaN ultraviolet (UV) light-emitting diodes (LEDs) emitting at 380 nm. The output power of a conventional LED, a patterned sapphire substrate LED (PSS LED), and a PSS flip-chip LED (PSS FCLED) were about 0.94, 1.86, and 5.18 mW, respectively, at a forward injection current of 20 mA. These results indicate that the light output-powers of the PSS LED and PSS FCLED were enhanced as much as 97% and 451% compared to the conventional LED. Subsequent optical simulations confirm the remarkable enhancements in optical power of the PSS FCLED at UV wavelengths.
ISSN:1041-1135
DOI:10.1109/LPT.2008.2004700