Oblique-angle sputtered AlN nanocolumnar layer as a buffer layer in GaN-based LED

This work presents an aluminum nitride (AlN) nanocolumnar layer sputtered at various oblique angles and its application as a buffer layer for GaN-based light-emitting diodes (LEDs) that are fabricated on sapphire substrates. The OA-AlN nanocolumnar layer has a diameter of about 30–60 nm. The GaN-based LED structure is perpendicularly extended from the OA-AlN nanocolumnar layer. Then, the nanocolumnar structure is merged into p-GaN layer to form a mesa structure with a diameter of about 200–600 nm on the surface of the GaN-based LED. Moreover, optical characteristics of the LED were studied using photoluminescence, along with the blue-shifts observed as well. ► An AlN nanocolumnar buffer layer prepared by oblique-angle (OA) deposition. ► GaN-based LED structures were grown on a sapphire substrate with an AlN nanocolumnar buffer layer. ► The OA-AlN nanocolumnar layer has a diameter of about 30–60 nm.