A Novel 94-GHz MHMET-Based Diode Mixer Using a 3adB Tandem Coupler
We report a high-performance 94-GHz monolithic millimeter-wave integrated-circuit diode mixer using metamorphic high-electron mobility transistor (MHEMT) diodes and a coplanar waveguide tandem coupler. A novel single-balanced structure of diode mixer is proposed in this paper, where a 3-dB tandem co...
Gespeichert in:
Veröffentlicht in: | IEEE microwave and wireless components letters 2008-01, Vol.18 (9) |
---|---|
Hauptverfasser: | , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | We report a high-performance 94-GHz monolithic millimeter-wave integrated-circuit diode mixer using metamorphic high-electron mobility transistor (MHEMT) diodes and a coplanar waveguide tandem coupler. A novel single-balanced structure of diode mixer is proposed in this paper, where a 3-dB tandem coupler with two sections of parallel-coupled line and air-bridge crossover structures are used for wide frequency operation. The fabricated mixer exhibits excellent local oscillator-radio-frequency (LO-RF) isolation, greater than 30 dB, in the 5-GHz bandwidth of 91-96 GHz. A good conversion loss of 7.4 dB is measured at 94 GHz. The proposed MHEMT-based diode mixer shows superior LO-RF isolation and conversion loss to those of the W-band mixers reported to date. |
---|---|
ISSN: | 1531-1309 |
DOI: | 10.1109/LMWC.2008.2002466 |