A Novel 94-GHz MHMET-Based Diode Mixer Using a 3adB Tandem Coupler

We report a high-performance 94-GHz monolithic millimeter-wave integrated-circuit diode mixer using metamorphic high-electron mobility transistor (MHEMT) diodes and a coplanar waveguide tandem coupler. A novel single-balanced structure of diode mixer is proposed in this paper, where a 3-dB tandem co...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE microwave and wireless components letters 2008-01, Vol.18 (9)
Hauptverfasser: Lee, Mun-Kyo, Lim, Byeong-Ok, Lee, Sang-Jin, Ko, Dong-Sik, Moon, Sung-Woon, An, D, Kim, Yong-Hoh, Kim, Sam-Dong, Park, Hyun-Chang, Rhee, Jin-Koo
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We report a high-performance 94-GHz monolithic millimeter-wave integrated-circuit diode mixer using metamorphic high-electron mobility transistor (MHEMT) diodes and a coplanar waveguide tandem coupler. A novel single-balanced structure of diode mixer is proposed in this paper, where a 3-dB tandem coupler with two sections of parallel-coupled line and air-bridge crossover structures are used for wide frequency operation. The fabricated mixer exhibits excellent local oscillator-radio-frequency (LO-RF) isolation, greater than 30 dB, in the 5-GHz bandwidth of 91-96 GHz. A good conversion loss of 7.4 dB is measured at 94 GHz. The proposed MHEMT-based diode mixer shows superior LO-RF isolation and conversion loss to those of the W-band mixers reported to date.
ISSN:1531-1309
DOI:10.1109/LMWC.2008.2002466