Numerical Study of the Turnoff Behavior of High-Voltage 4H-SiC IGBTs

Numerical Study of the Turnoff Behavior of High-Voltage 4H-SiC IGBTs

The turnoff behavior of high-voltage 4H-SiC p-channel insulated gate bipolar transistors is investigated by 2-D numerical simulations. Minority carrier lifetime in the nonpunch-through buffer layer is found to be the major factor determining switching loss.

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Veröffentlicht in:IEEE transactions on electron devices 2008-08, Vol.55 (8), p.1928-1933
Hauptverfasser: Tamaki, Tomohiro, Walden, Ginger G., Sui, Yang, Cooper, James A.
Format: Artikel
Sprache:eng
Schlagworte:
4H-SiC
Buffer layers
Cathodes
Computer simulation
Devices
IGBT
Insulated gate bipolar transistors
Integrated circuit modeling
Mathematical models
Minority carriers
Spontaneous emission
Switches
Switching
Transient analysis
turnoff
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Beschreibung
Zusammenfassung:The turnoff behavior of high-voltage 4H-SiC p-channel insulated gate bipolar transistors is investigated by 2-D numerical simulations. Minority carrier lifetime in the nonpunch-through buffer layer is found to be the major factor determining switching loss.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2008.926594