Partial Crystallization of HfO sub(2) for Two-Bit/Four-Level SONOS-Type Flash Memory

Partial Crystallization of HfO sub(2) for Two-Bit/Four-Level SONOS-Type Flash Memory

The nonvolatile memory properties of the partially crystallized HfO sub(2) charge storage layer are investigated using short-channel devices of gate length L sub(g) down to 80 nm. Highly efficient two-bit and four-level device operation is demonstrated by channel hot electron injection programming a...

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Veröffentlicht in:IEEE transactions on electron devices 2007-01, Vol.54 (12)
Hauptverfasser: Zhang, Gang, Samanta, S K, Singh, P K, Ma, Fa-Jun, Yoo, Min-Tae, Roh, Yonghan, Yoo, Won Jong
Format: Artikel
Sprache:eng
Schlagworte:
Crystallization
Devices
Durability
Endurance
Hafnium oxide
Nanomaterials
Nanostructure
Programming
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Zusammenfassung:The nonvolatile memory properties of the partially crystallized HfO sub(2) charge storage layer are investigated using short-channel devices of gate length L sub(g) down to 80 nm. Highly efficient two-bit and four-level device operation is demonstrated by channel hot electron injection programming and hot hole injection erasing for devices of L sub(g) > 170 nm, although the reduction of the memory window is observed for devices of L sub(g)
ISSN:0018-9383
DOI:10.1109/TED.2007.908863