An Analytical Compact Circuit Model for Nanowire FET

In this paper, we propose a quasi-analytical device model of nanowire FET (NWFET) for both ballistic and drift-diffusion current transport, which can be used in any conventional circuit simulator like SPICE. The closed form expressions for current-voltage (I-V) and capacitance-voltage characteristic...

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Veröffentlicht in:	IEEE transactions on electron devices 2007-07, Vol.54 (7), p.1637-1644
Hauptverfasser:	Paul, B.C., Ryan Tu, Fujita, S., Okajima, M., Lee, T.H., Nishi, Y.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Approximation Ballistic transport compact model Devices drift-diffusion transport Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Exact solutions Mathematical analysis Nanocomposites Nanomaterials Nanostructure nanowire FET (NWFET) Nanowires Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Theoretical study. Circuits analysis and design Transistors Volt-ampere characteristics
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Beschreibung
Zusammenfassung:	In this paper, we propose a quasi-analytical device model of nanowire FET (NWFET) for both ballistic and drift-diffusion current transport, which can be used in any conventional circuit simulator like SPICE. The closed form expressions for current-voltage (I-V) and capacitance-voltage characteristics are obtained by analytically solving device equations with appropriate approximations. The developed model was further verified with the measured I-V characteristics of an NWFET device. Results show a close match of the model with measured data.
ISSN:	0018-9383 1557-9646
DOI:	10.1109/TED.2007.899397