Recommended Test Conditions for SEB Evaluation of Planar Power DMOSFETs

Recommended Test Conditions for SEB Evaluation of Planar Power DMOSFETs

This paper discusses issues concerning single-event burnout (SEB) and single-event gate rupture (SEGR); explains and provides a basic overview of the preferred test conditions and procedures that would yield the most meaningful test results in evaluating power MOSFETs' SEB susceptibilities, des...

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Veröffentlicht in:IEEE transactions on nuclear science 2008-12, Vol.55 (6), p.3122-3129
Hauptverfasser: Liu, S., Titus, J.L., DiCienzo, C., Huy Cao, Zafrani, M., Boden, M., Berberian, R.
Format: Artikel
Sprache:eng
Schlagworte:
Cranes
Cyclotrons
Epitaxial layers
Failure analysis
Failure mechanisms
Failure modes
Fuel consumption
Gates
Heavy ions
MOSFET circuits
MOSFETs
Nuclear power generation
Power MOSFET
Pulp manufacturing
Rectifiers
Rupture
single-event burnout (SEB)
single-event gate rupture (SEGR)
Testing
Voltage
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Beschreibung
Zusammenfassung:This paper discusses issues concerning single-event burnout (SEB) and single-event gate rupture (SEGR); explains and provides a basic overview of the preferred test conditions and procedures that would yield the most meaningful test results in evaluating power MOSFETs' SEB susceptibilities, describes how to correctly identify SEB and SEGR failure modes to derive the most feasible failure mechanisms.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2008.2006841