Excellent Switching Uniformity of Cu-Doped hbox MoO x / hbox GdO x Bilayer for Nonvolatile Memory Applications

We have investigated a Cu-doped MoO sub(x)/GdO sub(x) bilayer film for nonvolatile memory applications. By adopting an ultrathin GdO sub(x) layer, we obtained excellent device characteristics such as resistance ratio of three orders of magnitude, uniform distribution of set and reset voltages, switc...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE electron device letters 2009-01, Vol.30 (5)
Hauptverfasser:	Yoon, Jaesik, Choi, Hyejung, Lee, Dongsoo, Park, Ju-Bong, Lee, Joonmyoung, Seong, Dong-Jun, Ju, Yongkyu, Chang, Man, Jung, Seungjae, Hwang, Hyunsang
Format:	Artikel
Sprache:	eng
Schlagworte:	Copper Devices Filaments Nanocomposites Nanomaterials Nanostructure Switching Voltage
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!