Excellent Switching Uniformity of Cu-Doped hbox MoO x / hbox GdO x Bilayer for Nonvolatile Memory Applications

We have investigated a Cu-doped MoO sub(x)/GdO sub(x) bilayer film for nonvolatile memory applications. By adopting an ultrathin GdO sub(x) layer, we obtained excellent device characteristics such as resistance ratio of three orders of magnitude, uniform distribution of set and reset voltages, switching endurance up to 10 super(4) cycles, and ten years of data retention at 85degC. By adopting bilayer films of Cu-doped MoO sub(x)/GdO sub(x), a local filament was formed by a two-step process. Improved memory characteristics can be explained by the formation of nanoscale local filament in the ultrathin GdO sub(x) layer.