hbox In 0.53 hbox Ga 0.47 hbox As Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

Abstract-We report Al sub(2)O sub(3)Zln sub(0. 53)Ga sub(0.47)As MOSFETs having both self-aligned in situ Mo source/drain ohmic contacts and self-aligned InAs source/drain n super(+) regions formed by MBE regrowth. The device epitaxial dimensions are small, as is required for 22-nm gate length MOSFE...

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Veröffentlicht in:	IEEE electron device letters 2009-01, Vol.30 (11)
Hauptverfasser:	Singisetti, U, Wistey, MA, Burek, G J, Baraskar, A K, Thibeault, B J, Gossard, A C, Rodwell, MJW, Shin, Byungha, Kim, E J, McIntyre, P C, Bo Yu, Bo Yu, Yuan, Yu, Wang, D, Taur, Yuan, Asbeck, P, Lee, Yong-Ju
Format:	Artikel
Sprache:	eng
Schlagworte:	Channels Devices Drains Gallium Gates Indium arsenides Molecular beam epitaxy MOSFETs
Online-Zugang:	Volltext
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