hbox In 0.53 hbox Ga 0.47 hbox As Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

Abstract-We report Al sub(2)O sub(3)Zln sub(0. 53)Ga sub(0.47)As MOSFETs having both self-aligned in situ Mo source/drain ohmic contacts and self-aligned InAs source/drain n super(+) regions formed by MBE regrowth. The device epitaxial dimensions are small, as is required for 22-nm gate length MOSFETs; a 5-nm In sub(0.53)Ga sub(0.47)As channel with an In sub(0.4)sAl sub(0.52)As back confinement layer and the n super(++) source/drain junctions do not extend below the 5-nm channel. A device with 200-nm gate length showed I sub(D) = 0.95 mA/mum current density at V sub(GS) = 4.0 V and g sub(m) = 0.45 mS/mum peak transconductance at V sub(DS) = 2.0 V.