Fabrication of p-type CuSCN/n-type micro-structured ZnO heterojunction structures

Micro-sized ZnO rods on a SnO2 coated glass substrate were obtained by the spray pyrolysis method. Then a p-type CuSCN layer was deposited on this micro-sized n-ZnO to produce a p–n heterojunction. Temperature dependent current–voltage characteristics were measured in the temperature range 150–300K with a step of 25K. The current–voltage characteristics exhibit electrical rectification behavior. The zero bias barrier height Φb0 increases and the ideality factor n decreases with an increase in temperature. The apparent Richardson constant and mean barrier height were found to be 0.0028A cm−2 K−2 and 0.228eV respectively in the range 150–300K. After a barrier height inhomogeneity correction, the Richardson constant and the mean barrier height were obtained as 65.20A cm−2 K−2 and 0.840eV, respectively.