p-i-n Homojunction in Organic Light-Emitting Transistors

p-i-n Homojunction in Organic Light-Emitting Transistors

A new method for investigating light‐emitting property in organic devices is demonstrated. We apply the ambipolar light‐emitting transistors (LETs) to directly observe the recombination zone, and find a strong link between the transistor performance and the zone size. This finding unambiguously indi...

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Veröffentlicht in:Advanced materials (Weinheim) 2011-06, Vol.23 (24), p.2753-2758
Hauptverfasser: Bisri, Satria Zulkarnaen, Takenobu, Taishi, Sawabe, Kosuke, Tsuda, Satoshi, Yomogida, Yohei, Yamao, Takeshi, Hotta, Shu, Adachi, Chihaya, Iwasa, Yoshihiro
Format: Artikel
Sprache:eng
Schlagworte:
Anthracenes - chemistry
Doping
Electronic Mechanism
Naphthacenes - chemistry
Organic Electronics
Organic Field-Effect Transistors
Pyrenes - chemistry
Thiophenes - chemistry
Transistor
Transistors, Electronic
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Zusammenfassung:A new method for investigating light‐emitting property in organic devices is demonstrated. We apply the ambipolar light‐emitting transistors (LETs) to directly observe the recombination zone, and find a strong link between the transistor performance and the zone size. This finding unambiguously indicates that the light emission comes from the electric‐field‐induced p‐i‐n homojunction in ambipolar LETs.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201004572