Controlled Growth of Well-Aligned GaS Nanohornlike Structures and Their Field Emission Properties

Here, we report the synthesis of vertically aligned gallium sulfide (GaS) nanohorn arrays using simple vapor–liquid–solid (VLS) method. The morphologies of GaS nano and microstructures are tuned by controlling the temperature and position of the substrate with respect to the source material. A plausible mechanism for the controlled growth has been proposed. It is important to note that the turn-on field value of GaS nanohorns array is found to be the low turn-on field 4.2 V/μm having current density of 0.1 μA/cm2. The striking feature of the field emission behavior of the GaS nanohorn arrays is that the average emission current remains nearly constant over long time without any degradation.