On-chip stimulated Brillouin scattering

We demonstrate on-chip stimulated Brillouin scattering (SBS) in an As2S3 chalcogenide rib waveguide. SBS was characterized in a cm long waveguide with a cross-section 4 μm x 850 nm using the backscattered signal and pump-probe technique. The measured Brillouin shift and its full-width at half-maximu...

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Veröffentlicht in:Optics express 2011-04, Vol.19 (9), p.8285-8290
Hauptverfasser: Pant, Ravi, Poulton, Christopher G, Choi, Duk-Yong, Mcfarlane, Hannah, Hile, Samuel, Li, Enbang, Thevenaz, Luc, Luther-Davies, Barry, Madden, Stephen J, Eggleton, Benjamin J
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Sprache:eng
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Zusammenfassung:We demonstrate on-chip stimulated Brillouin scattering (SBS) in an As2S3 chalcogenide rib waveguide. SBS was characterized in a cm long waveguide with a cross-section 4 μm x 850 nm using the backscattered signal and pump-probe technique. The measured Brillouin shift and its full-width at half-maximum (FWHM) linewidth were ~7.7 GHz and 34 MHz, respectively. Probe vs. pump power measurements at the Brillouin shift were used to obtain the gain coefficient from an exponential fit. The Brillouin gain coefficient obtained was 0.715 x 10(-9) m/W. A probe gain of 16 dB was obtained for a CW pump power of ~300 mW.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.19.008285