Semiconductor Dendritic‐Linear Block Copolymers by Nitroxide Mediated Radical Polymerization

The first synthesis of a semiconductor hybrid diblock copolymer comprised of p‐type dendritic and n‐type linear blocks by nitroxide mediated radical polymerization (NMRP) is reported. A triphenylamine (TPA) bearing second generation polyether dendron [G2]‐OH has been functionalized with an alkoxyamine and, subsequently, perylene bisimide acrylate (PerAcr) was polymerized to obtain a hybrid block copolymer, [G2]‐b‐PPerAcr. The hybrid block copolymer structure is supported by 1H NMR and size exclusion chromatography. Furthermore, the novel materials were studied by UV‐vis absorption spectrometry, photoluminescence, cyclic voltammetry, differential scanning calorimetry and thermogravimetry analysis. In the search for novel architectures for organic semiconductors we synthesized a hybrid diblock copolymer with p‐type dendritic and n‐type linear block by nitroxide mediated radical polymerization (NMRP). The dendritic alcohol was first functionalized with a TIPNO derivative followed by polymerization of perylene bisimide acrylate. The feasibility of this approach as well as various properties of the resulting block copolymer are given here.