Integration Benefits of Carborane Molecular Implant for State-of-the-Art 28-nm Logic pFET Device Manufacturing

Integration Benefits of Carborane Molecular Implant for State-of-the-Art 28-nm Logic pFET Device Manufacturing

In this letter, for the first time, the integration benefits of a molecular carborane (CBH-C 2 B 10 H 12 ) implant on a state-of-the-art 28-nm logic flow are demonstrated and discussed via advanced modeling. It is shown that, by integrating CBH, pLDD formation can be optimized to provide device bene...

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Veröffentlicht in:IEEE electron device letters 2011-04, Vol.32 (4), p.548-550
Hauptverfasser: Li, C I, Shen, T M, Kuo, P, Liu, R, Chan, M, Yang, C L, Wu, J Y, Colombeau, B, Guo, B N, Thanigaivelan, T, Toh, T, Sun, H L, Wu, T, Lu, S
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Boron
Carbon
Carborane
Complementary metal-oxide-semiconductor logic devices
Damage
Devices
Implants
ion implantation
Junctions
Logic
Logic gates
process modeling
Semiconductor process modeling
State of the art
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Beschreibung
Zusammenfassung:In this letter, for the first time, the integration benefits of a molecular carborane (CBH-C 2 B 10 H 12 ) implant on a state-of-the-art 28-nm logic flow are demonstrated and discussed via advanced modeling. It is shown that, by integrating CBH, pLDD formation can be optimized to provide device benefits via profile/damage engineering.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2011.2105855