Semiconductor parameter extraction using cathodoluminescence and genetic algorithms
This paper presents a novel approach for the extraction of five semiconductor-related parameters, that is, the absorption coefficient α, diffusion length L, normalized surface recombination velocity S, dead layer thickness Zt and the relative quantum efficiency Q directly from any theoretical/experi...
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Veröffentlicht in: | Materials science in semiconductor processing 2011-03, Vol.14 (1), p.62-68 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | This paper presents a novel approach for the extraction of five semiconductor-related parameters, that is, the absorption coefficient
α, diffusion length
L, normalized surface recombination velocity
S, dead layer thickness
Zt and the relative quantum efficiency
Q directly from any theoretical/experimental steady state cathodoluminescence (CL) signal. The extraction technique, based on genetic algorithms (GA), has many advantages such as the simultaneous obtainment of near-optimum values for the five parameters (
α,
L,
S,
Zt,
Q). Simulation results for an n-type GaAs defect free semi-infinite semiconductor sample show that the proposed approach is successful and a set of parameter values with error less than 12% from the nominal values, in 95% of the cases, can be obtained. |
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ISSN: | 1369-8001 1873-4081 |
DOI: | 10.1016/j.mssp.2011.01.010 |