ZnO:Co diluted magnetic semiconductor or hybrid nanostructure for spintronics?

We have studied the influence of intrinsic and extrinsic defects in the magnetic and electrical transport properties of Co-doped ZnO thin films. X-ray absorption measurements show that Co substitute Zn in the ZnO structure and it is in the 2+ oxidation state. Magnetization (M) measurements show that...

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Veröffentlicht in:Journal of materials science 2010-11, Vol.45 (22), p.6174-6178
Hauptverfasser: Golmar, F., Villafuerte, M., Mudarra Navarro, A., Rodríguez Torres, C. E., Barzola-Quiquia, J., Esquinazi, P., Heluani, S. P.
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Sprache:eng
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Zusammenfassung:We have studied the influence of intrinsic and extrinsic defects in the magnetic and electrical transport properties of Co-doped ZnO thin films. X-ray absorption measurements show that Co substitute Zn in the ZnO structure and it is in the 2+ oxidation state. Magnetization (M) measurements show that doped samples are mainly paramagnetic. From M vs. H loops measured at 5 K we found that the values of the orbital L and spin S numbers are between 1 and 1.3 for L and S = 3/2, in agreement with the representative values for isolated Co 2+. The obtained negative values of the Curie–Weiss temperatures indicate the existence of antiferromagnetic interactions between transition metal atoms.
ISSN:0022-2461
1573-4803
DOI:10.1007/s10853-010-4710-2