Tensile measurement of single crystal gallium nitride nanowires on MEMS test stages
This paper reports direct tensile tests on n-type (Si-doped) gallium nitride single crystal nanowires 1 1 Contribution of NIST, an agency of the U.S. government, not subject to copyright. that were grown by nitrogen plasma-assisted molecular beam epitaxy and which are essentially free of defects and...
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| Veröffentlicht in: | Sensors and actuators. A. Physical. 2011-04, Vol.166 (2), p.177-186 |
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| container_title | Sensors and actuators. A. Physical. |
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| creator | Brown, J.J. Baca, A.I. Bertness, K.A. Dikin, D.A. Ruoff, R.S. Bright, V.M. |
| description | This paper reports direct tensile tests on n-type (Si-doped) gallium nitride single crystal nanowires
1
1
Contribution of NIST, an agency of the U.S. government, not subject to copyright.
that were grown by nitrogen plasma-assisted molecular beam epitaxy and which are essentially free of defects and residual strain. Nanowires were integrated with actuated, active microelectromechanical (MEMS) devices using dielectrophoresis-driven self-assembly and platinum-carbon clamps created using a gallium focused ion beam. For one nanowire, failure strain of 0.042
±
0.011 was found. Most nanowire specimens appeared to demonstrate tensile strength in the range of 4.0
±
1.7
GPa to 7.5
±
3.4
GPa. Failure modes included clamp failure, transverse (nanowire
c-plane) fractures, and insufficient force from the MEMS test actuator. |
| doi_str_mv | 10.1016/j.sna.2010.04.002 |
| format | Article |
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1
1
Contribution of NIST, an agency of the U.S. government, not subject to copyright.
that were grown by nitrogen plasma-assisted molecular beam epitaxy and which are essentially free of defects and residual strain. Nanowires were integrated with actuated, active microelectromechanical (MEMS) devices using dielectrophoresis-driven self-assembly and platinum-carbon clamps created using a gallium focused ion beam. For one nanowire, failure strain of 0.042
±
0.011 was found. Most nanowire specimens appeared to demonstrate tensile strength in the range of 4.0
±
1.7
GPa to 7.5
±
3.4
GPa. Failure modes included clamp failure, transverse (nanowire
c-plane) fractures, and insufficient force from the MEMS test actuator.</description><identifier>ISSN: 0924-4247</identifier><identifier>EISSN: 1873-3069</identifier><identifier>DOI: 10.1016/j.sna.2010.04.002</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Actuators ; Clamps ; Failure ; Gallium Nitride ; Mechanical Testing ; MEMS ; Microelectromechanical systems ; Nanostructure ; Nanowire ; Nanowires ; Nitrides ; Self assembly ; Single Crystal ; Strain ; Tensile Loading</subject><ispartof>Sensors and actuators. A. Physical., 2011-04, Vol.166 (2), p.177-186</ispartof><rights>2010 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c329t-dbf5c6dd7bb7b9c54fadcab5b18056b51a44d5c88df9ced227c2402842e4f7303</citedby><cites>FETCH-LOGICAL-c329t-dbf5c6dd7bb7b9c54fadcab5b18056b51a44d5c88df9ced227c2402842e4f7303</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.sna.2010.04.002$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3548,27922,27923,45993</link.rule.ids></links><search><creatorcontrib>Brown, J.J.</creatorcontrib><creatorcontrib>Baca, A.I.</creatorcontrib><creatorcontrib>Bertness, K.A.</creatorcontrib><creatorcontrib>Dikin, D.A.</creatorcontrib><creatorcontrib>Ruoff, R.S.</creatorcontrib><creatorcontrib>Bright, V.M.</creatorcontrib><title>Tensile measurement of single crystal gallium nitride nanowires on MEMS test stages</title><title>Sensors and actuators. A. Physical.</title><description>This paper reports direct tensile tests on n-type (Si-doped) gallium nitride single crystal nanowires
1
1
Contribution of NIST, an agency of the U.S. government, not subject to copyright.
that were grown by nitrogen plasma-assisted molecular beam epitaxy and which are essentially free of defects and residual strain. Nanowires were integrated with actuated, active microelectromechanical (MEMS) devices using dielectrophoresis-driven self-assembly and platinum-carbon clamps created using a gallium focused ion beam. For one nanowire, failure strain of 0.042
±
0.011 was found. Most nanowire specimens appeared to demonstrate tensile strength in the range of 4.0
±
1.7
GPa to 7.5
±
3.4
GPa. Failure modes included clamp failure, transverse (nanowire
c-plane) fractures, and insufficient force from the MEMS test actuator.</description><subject>Actuators</subject><subject>Clamps</subject><subject>Failure</subject><subject>Gallium Nitride</subject><subject>Mechanical Testing</subject><subject>MEMS</subject><subject>Microelectromechanical systems</subject><subject>Nanostructure</subject><subject>Nanowire</subject><subject>Nanowires</subject><subject>Nitrides</subject><subject>Self assembly</subject><subject>Single Crystal</subject><subject>Strain</subject><subject>Tensile Loading</subject><issn>0924-4247</issn><issn>1873-3069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp9kMtOwzAQRS0EEqXwAey8Y5XgV-JErFBVHlIrFi1ry7EnlavEKXYC6t_jqqxZjWZ078zcg9A9JTkltHzc59HrnJHUE5ETwi7QjFaSZ5yU9SWakZqJTDAhr9FNjHtCCOdSztBmCz66DnAPOk4BevAjHlocnd-lqQnHOOoO73TXuanH3o3BWcBe--HHBYh48Hi9XG_wCHHESbuDeIuuWt1FuPurc_T5stwu3rLVx-v74nmVGc7qMbNNW5jSWtk0sqlNIVptjW6KhlakKJuCaiFsYarKtrUBy5g0TBBWCQailZzwOXo47z2E4WtK91XvooGu0x6GKaqqrCteifKkpGelCUOMAVp1CK7X4agoUSd-aq8SP3Xip4hQiV_yPJ09kCJ8OwgqGgc-fZJym1HZwf3j_gUIAnnd</recordid><startdate>20110401</startdate><enddate>20110401</enddate><creator>Brown, J.J.</creator><creator>Baca, A.I.</creator><creator>Bertness, K.A.</creator><creator>Dikin, D.A.</creator><creator>Ruoff, R.S.</creator><creator>Bright, V.M.</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7TB</scope><scope>7U5</scope><scope>8FD</scope><scope>FR3</scope><scope>L7M</scope></search><sort><creationdate>20110401</creationdate><title>Tensile measurement of single crystal gallium nitride nanowires on MEMS test stages</title><author>Brown, J.J. ; Baca, A.I. ; Bertness, K.A. ; Dikin, D.A. ; Ruoff, R.S. ; Bright, V.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c329t-dbf5c6dd7bb7b9c54fadcab5b18056b51a44d5c88df9ced227c2402842e4f7303</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Actuators</topic><topic>Clamps</topic><topic>Failure</topic><topic>Gallium Nitride</topic><topic>Mechanical Testing</topic><topic>MEMS</topic><topic>Microelectromechanical systems</topic><topic>Nanostructure</topic><topic>Nanowire</topic><topic>Nanowires</topic><topic>Nitrides</topic><topic>Self assembly</topic><topic>Single Crystal</topic><topic>Strain</topic><topic>Tensile Loading</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Brown, J.J.</creatorcontrib><creatorcontrib>Baca, A.I.</creatorcontrib><creatorcontrib>Bertness, K.A.</creatorcontrib><creatorcontrib>Dikin, D.A.</creatorcontrib><creatorcontrib>Ruoff, R.S.</creatorcontrib><creatorcontrib>Bright, V.M.</creatorcontrib><collection>CrossRef</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Sensors and actuators. A. Physical.</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Brown, J.J.</au><au>Baca, A.I.</au><au>Bertness, K.A.</au><au>Dikin, D.A.</au><au>Ruoff, R.S.</au><au>Bright, V.M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Tensile measurement of single crystal gallium nitride nanowires on MEMS test stages</atitle><jtitle>Sensors and actuators. A. Physical.</jtitle><date>2011-04-01</date><risdate>2011</risdate><volume>166</volume><issue>2</issue><spage>177</spage><epage>186</epage><pages>177-186</pages><issn>0924-4247</issn><eissn>1873-3069</eissn><abstract>This paper reports direct tensile tests on n-type (Si-doped) gallium nitride single crystal nanowires
1
1
Contribution of NIST, an agency of the U.S. government, not subject to copyright.
that were grown by nitrogen plasma-assisted molecular beam epitaxy and which are essentially free of defects and residual strain. Nanowires were integrated with actuated, active microelectromechanical (MEMS) devices using dielectrophoresis-driven self-assembly and platinum-carbon clamps created using a gallium focused ion beam. For one nanowire, failure strain of 0.042
±
0.011 was found. Most nanowire specimens appeared to demonstrate tensile strength in the range of 4.0
±
1.7
GPa to 7.5
±
3.4
GPa. Failure modes included clamp failure, transverse (nanowire
c-plane) fractures, and insufficient force from the MEMS test actuator.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.sna.2010.04.002</doi><tpages>10</tpages></addata></record> |
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| ispartof | Sensors and actuators. A. Physical., 2011-04, Vol.166 (2), p.177-186 |
| issn | 0924-4247 1873-3069 |
| language | eng |
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| source | Elsevier ScienceDirect Journals Complete |
| subjects | Actuators Clamps Failure Gallium Nitride Mechanical Testing MEMS Microelectromechanical systems Nanostructure Nanowire Nanowires Nitrides Self assembly Single Crystal Strain Tensile Loading |
| title | Tensile measurement of single crystal gallium nitride nanowires on MEMS test stages |
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