Alignment and optical polarization of InGaAs quantum wires on GaAs high index surfaces

Highly ordered three-dimensional periodic arrays of In 0.40Ga 0.60As quantum wires (QWRs) on GaAs (311)A and GaAs (331)A have been achieved by molecular beam epitaxy and revealed by high-resolution X-ray diffraction. Polarization dependent photoluminescence measurements demonstrated high optical ani...

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Veröffentlicht in:	Materials letters 2011-05, Vol.65 (9), p.1427-1430
Hauptverfasser:	Dorogan, V.G., Wang, Zh.M., Kunets, Vas.P., Schmidbauer, M., Xie, Y.Z., Teodoro, M.D., Lytvyn, P.M., Mazur, Yu.I., Salamo, G.J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Arrays arsenic Diffraction gallium Gallium arsenide Gallium arsenides indium Indium gallium arsenides InGaAs quantum wires Molecular beam epitaxy nanowires Optical polarization optics Piezoelectricity Polarization Quantum wires X-ray diffraction
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