Alignment and optical polarization of InGaAs quantum wires on GaAs high index surfaces

Alignment and optical polarization of InGaAs quantum wires on GaAs high index surfaces

Highly ordered three-dimensional periodic arrays of In 0.40Ga 0.60As quantum wires (QWRs) on GaAs (311)A and GaAs (331)A have been achieved by molecular beam epitaxy and revealed by high-resolution X-ray diffraction. Polarization dependent photoluminescence measurements demonstrated high optical ani...

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Veröffentlicht in:Materials letters 2011-05, Vol.65 (9), p.1427-1430
Hauptverfasser: Dorogan, V.G., Wang, Zh.M., Kunets, Vas.P., Schmidbauer, M., Xie, Y.Z., Teodoro, M.D., Lytvyn, P.M., Mazur, Yu.I., Salamo, G.J.
Format: Artikel
Sprache:eng
Schlagworte:
Arrays
arsenic
Diffraction
gallium
Gallium arsenide
Gallium arsenides
indium
Indium gallium arsenides
InGaAs quantum wires
Molecular beam epitaxy
nanowires
Optical polarization
optics
Piezoelectricity
Polarization
Quantum wires
X-ray diffraction
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Beschreibung
Zusammenfassung:Highly ordered three-dimensional periodic arrays of In 0.40Ga 0.60As quantum wires (QWRs) on GaAs (311)A and GaAs (331)A have been achieved by molecular beam epitaxy and revealed by high-resolution X-ray diffraction. Polarization dependent photoluminescence measurements demonstrated high optical anisotropy of 40% in (331)A QWRs and 16% in (311)A QWRs. Such a difference in polarization value could be caused by the differences in geometry, ordering, and high piezoelectric field between (331)A and (311)A samples.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2011.02.023