Alignment and optical polarization of InGaAs quantum wires on GaAs high index surfaces
Highly ordered three-dimensional periodic arrays of In 0.40Ga 0.60As quantum wires (QWRs) on GaAs (311)A and GaAs (331)A have been achieved by molecular beam epitaxy and revealed by high-resolution X-ray diffraction. Polarization dependent photoluminescence measurements demonstrated high optical ani...
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| Veröffentlicht in: | Materials letters 2011-05, Vol.65 (9), p.1427-1430 |
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| creator | Dorogan, V.G. Wang, Zh.M. Kunets, Vas.P. Schmidbauer, M. Xie, Y.Z. Teodoro, M.D. Lytvyn, P.M. Mazur, Yu.I. Salamo, G.J. |
| description | Highly ordered three-dimensional periodic arrays of In
0.40Ga
0.60As quantum wires (QWRs) on GaAs (311)A and GaAs (331)A have been achieved by molecular beam epitaxy and revealed by high-resolution X-ray diffraction. Polarization dependent photoluminescence measurements demonstrated high optical anisotropy of 40% in (331)A QWRs and 16% in (311)A QWRs. Such a difference in polarization value could be caused by the differences in geometry, ordering, and high piezoelectric field between (331)A and (311)A samples. |
| doi_str_mv | 10.1016/j.matlet.2011.02.023 |
| format | Article |
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0.40Ga
0.60As quantum wires (QWRs) on GaAs (311)A and GaAs (331)A have been achieved by molecular beam epitaxy and revealed by high-resolution X-ray diffraction. Polarization dependent photoluminescence measurements demonstrated high optical anisotropy of 40% in (331)A QWRs and 16% in (311)A QWRs. Such a difference in polarization value could be caused by the differences in geometry, ordering, and high piezoelectric field between (331)A and (311)A samples.</description><identifier>ISSN: 0167-577X</identifier><identifier>EISSN: 1873-4979</identifier><identifier>DOI: 10.1016/j.matlet.2011.02.023</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Arrays ; arsenic ; Diffraction ; gallium ; Gallium arsenide ; Gallium arsenides ; indium ; Indium gallium arsenides ; InGaAs quantum wires ; Molecular beam epitaxy ; nanowires ; Optical polarization ; optics ; Piezoelectricity ; Polarization ; Quantum wires ; X-ray diffraction</subject><ispartof>Materials letters, 2011-05, Vol.65 (9), p.1427-1430</ispartof><rights>2011 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c362t-c7490de4222bef90e7f806bb07e2a94a4eae6183df34b00fca64393545afffbc3</citedby><cites>FETCH-LOGICAL-c362t-c7490de4222bef90e7f806bb07e2a94a4eae6183df34b00fca64393545afffbc3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0167577X1100139X$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids></links><search><creatorcontrib>Dorogan, V.G.</creatorcontrib><creatorcontrib>Wang, Zh.M.</creatorcontrib><creatorcontrib>Kunets, Vas.P.</creatorcontrib><creatorcontrib>Schmidbauer, M.</creatorcontrib><creatorcontrib>Xie, Y.Z.</creatorcontrib><creatorcontrib>Teodoro, M.D.</creatorcontrib><creatorcontrib>Lytvyn, P.M.</creatorcontrib><creatorcontrib>Mazur, Yu.I.</creatorcontrib><creatorcontrib>Salamo, G.J.</creatorcontrib><title>Alignment and optical polarization of InGaAs quantum wires on GaAs high index surfaces</title><title>Materials letters</title><description>Highly ordered three-dimensional periodic arrays of In
0.40Ga
0.60As quantum wires (QWRs) on GaAs (311)A and GaAs (331)A have been achieved by molecular beam epitaxy and revealed by high-resolution X-ray diffraction. Polarization dependent photoluminescence measurements demonstrated high optical anisotropy of 40% in (331)A QWRs and 16% in (311)A QWRs. Such a difference in polarization value could be caused by the differences in geometry, ordering, and high piezoelectric field between (331)A and (311)A samples.</description><subject>Arrays</subject><subject>arsenic</subject><subject>Diffraction</subject><subject>gallium</subject><subject>Gallium arsenide</subject><subject>Gallium arsenides</subject><subject>indium</subject><subject>Indium gallium arsenides</subject><subject>InGaAs quantum wires</subject><subject>Molecular beam epitaxy</subject><subject>nanowires</subject><subject>Optical polarization</subject><subject>optics</subject><subject>Piezoelectricity</subject><subject>Polarization</subject><subject>Quantum wires</subject><subject>X-ray diffraction</subject><issn>0167-577X</issn><issn>1873-4979</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNp9kMFq3DAQhkVJoZu0b1Cobjl5I1myZV8CS2jTQCCHNqU3MZZHGy22tJHkpu3TV4l7DgwINN-vGX2EfORsyxlvLw7bGfKEeVszzresLiXekA3vlKhkr_oTsimYqhqlfr4jpykdGGOyZ3JDfuwmt_cz-kzBjzQcszMw0WOYILq_kF3wNFh6469hl-jjAj4vM31yERMtrZfbB7d_oM6P-JumJVowmN6TtxamhB_-n2fk_svn71dfq9u765ur3W1lRFvnyqiyxYiyrusBbc9Q2Y61w8AU1tBLkAjY8k6MVsiBMWuglaIXjWzAWjsYcUbO13ePMTwumLKeXTI4TeAxLEl3bd8JyRtVSLmSJoaUIlp9jG6G-Edzpp8t6oNeLepni5rVpUSJfVpjFoKGfXRJ338rQFMMCqZeiMuVwPLPXw6jTsahNzgWSSbrMbjXR_wD7BaHQQ</recordid><startdate>20110515</startdate><enddate>20110515</enddate><creator>Dorogan, V.G.</creator><creator>Wang, Zh.M.</creator><creator>Kunets, Vas.P.</creator><creator>Schmidbauer, M.</creator><creator>Xie, Y.Z.</creator><creator>Teodoro, M.D.</creator><creator>Lytvyn, P.M.</creator><creator>Mazur, Yu.I.</creator><creator>Salamo, G.J.</creator><general>Elsevier B.V</general><scope>FBQ</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20110515</creationdate><title>Alignment and optical polarization of InGaAs quantum wires on GaAs high index surfaces</title><author>Dorogan, V.G. ; Wang, Zh.M. ; Kunets, Vas.P. ; Schmidbauer, M. ; Xie, Y.Z. ; Teodoro, M.D. ; Lytvyn, P.M. ; Mazur, Yu.I. ; Salamo, G.J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c362t-c7490de4222bef90e7f806bb07e2a94a4eae6183df34b00fca64393545afffbc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Arrays</topic><topic>arsenic</topic><topic>Diffraction</topic><topic>gallium</topic><topic>Gallium arsenide</topic><topic>Gallium arsenides</topic><topic>indium</topic><topic>Indium gallium arsenides</topic><topic>InGaAs quantum wires</topic><topic>Molecular beam epitaxy</topic><topic>nanowires</topic><topic>Optical polarization</topic><topic>optics</topic><topic>Piezoelectricity</topic><topic>Polarization</topic><topic>Quantum wires</topic><topic>X-ray diffraction</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Dorogan, V.G.</creatorcontrib><creatorcontrib>Wang, Zh.M.</creatorcontrib><creatorcontrib>Kunets, Vas.P.</creatorcontrib><creatorcontrib>Schmidbauer, M.</creatorcontrib><creatorcontrib>Xie, Y.Z.</creatorcontrib><creatorcontrib>Teodoro, M.D.</creatorcontrib><creatorcontrib>Lytvyn, P.M.</creatorcontrib><creatorcontrib>Mazur, Yu.I.</creatorcontrib><creatorcontrib>Salamo, G.J.</creatorcontrib><collection>AGRIS</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Materials letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Dorogan, V.G.</au><au>Wang, Zh.M.</au><au>Kunets, Vas.P.</au><au>Schmidbauer, M.</au><au>Xie, Y.Z.</au><au>Teodoro, M.D.</au><au>Lytvyn, P.M.</au><au>Mazur, Yu.I.</au><au>Salamo, G.J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Alignment and optical polarization of InGaAs quantum wires on GaAs high index surfaces</atitle><jtitle>Materials letters</jtitle><date>2011-05-15</date><risdate>2011</risdate><volume>65</volume><issue>9</issue><spage>1427</spage><epage>1430</epage><pages>1427-1430</pages><issn>0167-577X</issn><eissn>1873-4979</eissn><abstract>Highly ordered three-dimensional periodic arrays of In
0.40Ga
0.60As quantum wires (QWRs) on GaAs (311)A and GaAs (331)A have been achieved by molecular beam epitaxy and revealed by high-resolution X-ray diffraction. Polarization dependent photoluminescence measurements demonstrated high optical anisotropy of 40% in (331)A QWRs and 16% in (311)A QWRs. Such a difference in polarization value could be caused by the differences in geometry, ordering, and high piezoelectric field between (331)A and (311)A samples.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.matlet.2011.02.023</doi><tpages>4</tpages></addata></record> |
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| language | eng |
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| source | Elsevier ScienceDirect Journals |
| subjects | Arrays arsenic Diffraction gallium Gallium arsenide Gallium arsenides indium Indium gallium arsenides InGaAs quantum wires Molecular beam epitaxy nanowires Optical polarization optics Piezoelectricity Polarization Quantum wires X-ray diffraction |
| title | Alignment and optical polarization of InGaAs quantum wires on GaAs high index surfaces |
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