Development of a Versatile Physics-Based Finite-Element Model of an AlGaN/GaN HEMT Capable of Accommodating Process and Epitaxy Variations and Calibrated Using Multiple DC Parameters

We present a physics-based finite-element model of operation of an AlGaN/GaN HEMT with device geometry inputs taken from transmission electron microscope cross sections and calibrated by comparison with measured electrical data comprising standard field-effect transistor metrics and less well-known...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE transactions on electron devices 2011-04, Vol.58 (4), p.1091-1095
Hauptverfasser:	Heller, E R, Vetury, R, Green, D S
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitride Aluminum gallium nitrides Applied sciences Calibration Data models Device model Devices Electronics Exact sciences and technology field-effect transistor (FET) Finite element method Gallium nitride Gallium nitrides GaN GaN/AlGaN HEMTs High electron mobility transistors high-electron mobility transistor (HEMT) Logic gates Mathematical analysis Mathematical model Mathematical models model calibration model characterization modulation-doped field effect transistor (MODFET) Semiconductor device modeling Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	We present a physics-based finite-element model of operation of an AlGaN/GaN HEMT with device geometry inputs taken from transmission electron microscope cross sections and calibrated by comparison with measured electrical data comprising standard field-effect transistor metrics and less well-known model parameters. A variety of electrical outputs from the model are compared to experiment, and the level of agreement is reported.
ISSN:	0018-9383 1557-9646
DOI:	10.1109/TED.2011.2107913