The effect of SiO2 buffer layer on the electrical and structural properties of Al-doped ZnO films deposited on soda lime glasses

► We studied influence of SiO2 buffer layer on property of AZO films on soda lime glasses by sputtering. ► Electrical property of film deposited at high temperature is enhanced by introducing SiO2 layers. ► Optical absorption edge is blue shifted due to increase of carrier concentration. ► SiO2 layer prepared at 400°C is more effective compared with that at room temperature. ► Stress dependence of band gap is linear for AZO films on quartz but deviates for soda lime glasses. In this paper, the influence of SiO2 buffer layer on electrical and structural properties of AZO films on soda lime glasses has been investigated. The results showed that the Hall mobility and carrier concentration of AZO films deposited on soda lime glasses at high temperature could be enhanced by introducing SiO2 layers. The optical absorption edges of AZO films with SiO2 buffer layer are blue shifted compared with that of buffer layer free due to the increase of carrier concentration. SiO2 layers prepared at 400°C more effectively suppress the diffusion of Na atoms into AZO films compared with that prepared at room temperature. On the other hand, the in-plane stress dependence of optical band gap is linear for AZO films deposited on quartz glass substrates, but is deviated from linearity in the case of soda lime glass substrates.