Copper doped nickel oxide transparent p-type conductive thin films deposited by pulsed plasma deposition

Transparent p-type conductive Ni 0.9Cu 0.1O thin films were prepared by pulsed plasma deposition (PPD) method. The effects of substrate temperature and oxygen pressure on the structural, electrical and optical properties of the films were investigated respectively. The film deposited at room tempera...

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Veröffentlicht in:	Thin solid films 2011-03, Vol.519 (10), p.3021-3025
Hauptverfasser:	Yang, Ming, Shi, Zhan, Feng, Jiahan, Pu, Haifeng, Li, Guifeng, Zhou, Jun, Zhang, Qun
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity Copper doped nickel oxide Cross-disciplinary physics: materials science rheology DEPOSITION DIODES DOPING ELECTRICAL CONDUCTIVITY Electrical properties and measurements Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Ion and electron beam-assisted deposition ion plating Materials science Methods of deposition of films and coatings film growth and epitaxy Nickel oxides OPTICAL PROPERTIES Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films OXIDES p-type transparent conducting oxide Physics Physics of gases, plasmas and electric discharges Physics of plasmas and electric discharges Plasma applications Plasma deposition Plasma-based ion implantation and deposition PLASMAS PROPERTIES Pulsed plasma deposition Resistivity Surface morphology Thin film diode THIN FILMS Transmittance X-ray diffraction
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Zusammenfassung:	Transparent p-type conductive Ni 0.9Cu 0.1O thin films were prepared by pulsed plasma deposition (PPD) method. The effects of substrate temperature and oxygen pressure on the structural, electrical and optical properties of the films were investigated respectively. The film deposited at room temperature exhibits the highest conductivity of 5.17 S cm −1, with an average transmittance of 60% in the visible region. A transparent p-Ni 0.9Cu 0.1O/n-In 2O 3:W (IWO) hetero-junction diode was fabricated exhibiting rectifying current–voltage characteristics.
ISSN:	0040-6090 1879-2731
DOI:	10.1016/j.tsf.2010.12.009