Ka-Band 5-Bit MMIC Phase Shifter Using InGaAs PIN Switching Diodes

The design and performance of a Ka-band 5 b MMIC phase shifter using InGaAs PIN switching diodes is presented. In order to achieve low insertion loss and good phase shifting characteristics at Ka-band, a switched reactance type InGaAs PIN-diode phase shifter topology has been employed with a compact...

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Veröffentlicht in:	IEEE microwave and wireless components letters 2011-03, Vol.21 (3), p.151-153
Hauptverfasser:	JUNG GIL YANG, YANG, Kyounghoon
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Circuit properties Circuits of signal characteristics conditioning (including delay circuits) Diodes Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Frequency measurement Indium gallium arsenide Indium gallium arsenides InGaAs Insertion loss Ka-band Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwaves MMIC MMICs Networks Noise levels Phase measurement phase shifter Phase shifters PIN-diode Reactance Switches Switching
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Beschreibung
Zusammenfassung:	The design and performance of a Ka-band 5 b MMIC phase shifter using InGaAs PIN switching diodes is presented. In order to achieve low insertion loss and good phase shifting characteristics at Ka-band, a switched reactance type InGaAs PIN-diode phase shifter topology has been employed with a compact bias network. The fabricated InGaAs PIN MMIC phase shifter has demonstrated good performance characteristics such as a low insertion loss of less than 7.8 dB and a high P 1 dB of 21.0 dBm compared to the previous results.
ISSN:	1531-1309 2771-957X 1558-1764 2771-9588
DOI:	10.1109/LMWC.2010.2104314