InGaN-based true green laser diodes on novel semi-polar { 2 0 2 ¯ 1 } GaN substrates

The crystal quality and emission characteristics of InGaN-based laser diodes (LDs) with lattice-matched quaternary InAlGaN cladding layers on novel semi-polar { 2 0 2 ¯ 1 } plane GaN substrates were investigated. Highly homogeneous InGaN quantum wells (QWs) with a suppressed piezoelectric field can be realized on the { 2 0 2 ¯ 1 } plane even in the green spectral region. Optical polarization measurements revealed that [ 1 ¯ 0 1 4 ] oriented stripes are advantageous for LDs on { 2 0 2 ¯ 1 } planes. Gain-guided LDs on the novel { 2 0 2 ¯ 1 } plane exhibited the longest lasing wavelength at 533.6 nm under pulsed operation. Continuous-wave (cw) operation at the lasing wavelength of 523.3 nm at 115 mA was also demonstrated. The I th , J th , V th , and the slope efficiency were 110 mA, 9.2 kA/cm 2, 7.4 V, and 0.04 W/A, respectively. These results indicate that the green LDs on semi-polar { 2 0 2 ¯ 1 } plane GaN substrates are promising candidates for laser display applications.