Epitaxial growth of ensembles of indium phosphide nanowires on various non-single crystal substrates using an amorphous template layer

Indium phosphide (InP) nanowires were grown by metal organic chemical vapor deposition on hydrogenated silicon (Si:H) surfaces prepared on various non-single crystal substrates. Structural and chemical properties of the nanowires were characterized by scanning electron microscopy, energy dispersive...

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Veröffentlicht in:	Journal of crystal growth 2011-01, Vol.315 (1), p.157-159
Hauptverfasser:	Lohn, Andrew J., Li, Xuema, Kobayashi, Nobuhiko P.
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Nanostructures A3. Metal organic vapor phase epitaxy B1. Nanomaterials B2. Semiconducting III–V materials Cross-disciplinary physics: materials science rheology Crystal growth Crystal structure Crystals Diffraction Epitaxial growth Exact sciences and technology Indium phosphides Materials science Methods of deposition of films and coatings film growth and epitaxy Nanoscale materials and structures: fabrication and characterization Nanowires Other semiconductors Other topics in nanoscale materials and structures Physics Quantum wires Silicon substrates Specific materials Theory and models of film growth X-rays
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