Epitaxial growth of ensembles of indium phosphide nanowires on various non-single crystal substrates using an amorphous template layer

Indium phosphide (InP) nanowires were grown by metal organic chemical vapor deposition on hydrogenated silicon (Si:H) surfaces prepared on various non-single crystal substrates. Structural and chemical properties of the nanowires were characterized by scanning electron microscopy, energy dispersive spectroscopy, and X-ray diffraction, elucidating the effect of varying the non-single crystal substrate on nanowire growth. A technique for growing InP nanowires on various non-single crystal substrates, including metals and dielectrics was demonstrated.