Epitaxial growth of ensembles of indium phosphide nanowires on various non-single crystal substrates using an amorphous template layer
Indium phosphide (InP) nanowires were grown by metal organic chemical vapor deposition on hydrogenated silicon (Si:H) surfaces prepared on various non-single crystal substrates. Structural and chemical properties of the nanowires were characterized by scanning electron microscopy, energy dispersive...
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| Veröffentlicht in: | Journal of crystal growth 2011-01, Vol.315 (1), p.157-159 |
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| container_title | Journal of crystal growth |
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| creator | Lohn, Andrew J. Li, Xuema Kobayashi, Nobuhiko P. |
| description | Indium phosphide (InP) nanowires were grown by metal organic chemical vapor deposition on hydrogenated silicon (Si:H) surfaces prepared on various non-single crystal substrates. Structural and chemical properties of the nanowires were characterized by scanning electron microscopy, energy dispersive spectroscopy, and X-ray diffraction, elucidating the effect of varying the non-single crystal substrate on nanowire growth. A technique for growing InP nanowires on various non-single crystal substrates, including metals and dielectrics was demonstrated. |
| doi_str_mv | 10.1016/j.jcrysgro.2010.08.050 |
| format | Article |
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Structural and chemical properties of the nanowires were characterized by scanning electron microscopy, energy dispersive spectroscopy, and X-ray diffraction, elucidating the effect of varying the non-single crystal substrate on nanowire growth. A technique for growing InP nanowires on various non-single crystal substrates, including metals and dielectrics was demonstrated.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2010.08.050</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Nanostructures ; A3. Metal organic vapor phase epitaxy ; B1. Nanomaterials ; B2. Semiconducting III–V materials ; Cross-disciplinary physics: materials science; rheology ; Crystal growth ; Crystal structure ; Crystals ; Diffraction ; Epitaxial growth ; Exact sciences and technology ; Indium phosphides ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Nanoscale materials and structures: fabrication and characterization ; Nanowires ; Other semiconductors ; Other topics in nanoscale materials and structures ; Physics ; Quantum wires ; Silicon substrates ; Specific materials ; Theory and models of film growth ; X-rays</subject><ispartof>Journal of crystal growth, 2011-01, Vol.315 (1), p.157-159</ispartof><rights>2010</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c440t-1125130db9300f0d46480afa69868236eed5c22c149324b45f50fb8d86a58ae03</citedby><cites>FETCH-LOGICAL-c440t-1125130db9300f0d46480afa69868236eed5c22c149324b45f50fb8d86a58ae03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0022024810005944$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,3537,23909,23910,25118,27901,27902,65534</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=23901531$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Lohn, Andrew J.</creatorcontrib><creatorcontrib>Li, Xuema</creatorcontrib><creatorcontrib>Kobayashi, Nobuhiko P.</creatorcontrib><title>Epitaxial growth of ensembles of indium phosphide nanowires on various non-single crystal substrates using an amorphous template layer</title><title>Journal of crystal growth</title><description>Indium phosphide (InP) nanowires were grown by metal organic chemical vapor deposition on hydrogenated silicon (Si:H) surfaces prepared on various non-single crystal substrates. Structural and chemical properties of the nanowires were characterized by scanning electron microscopy, energy dispersive spectroscopy, and X-ray diffraction, elucidating the effect of varying the non-single crystal substrate on nanowire growth. A technique for growing InP nanowires on various non-single crystal substrates, including metals and dielectrics was demonstrated.</description><subject>A1. Nanostructures</subject><subject>A3. Metal organic vapor phase epitaxy</subject><subject>B1. Nanomaterials</subject><subject>B2. Semiconducting III–V materials</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Crystal growth</subject><subject>Crystal structure</subject><subject>Crystals</subject><subject>Diffraction</subject><subject>Epitaxial growth</subject><subject>Exact sciences and technology</subject><subject>Indium phosphides</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>Nanowires</subject><subject>Other semiconductors</subject><subject>Other topics in nanoscale materials and structures</subject><subject>Physics</subject><subject>Quantum wires</subject><subject>Silicon substrates</subject><subject>Specific materials</subject><subject>Theory and models of film growth</subject><subject>X-rays</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqFUM1u1DAQjhBILIVXQL4gTtmO7SR1bqCqhUqVuMDZcpxJ1yvHDh6nZV-A58bRFq5cbHm-v_FXVe857Dnw7vK4P9p0oocU9wLKENQeWnhR7bi6knULIF5Wu3KKGkSjXldviI4ARclhV_2-WVw2v5zxrBg85QOLE8NAOA8eaXu4MLp1Zssh0nJwI7JgQnxyaUMDezTJxZVYiKEmFx48sm2ZXPxoHSgnkwtx3SBmAjNzTMWpCDLOiy8g8-aE6W31ajKe8N3zfVH9uL35fv21vv_25e76831tmwZyzblouYRx6CXABGPTNQrMZLpedUrIDnFsrRCWN70UzdC0UwvToEbVmVYZBHlRfTz7Lin-XJGynh1Z9N4ELFtp1fVXfYmQhdmdmTZFooSTXpKbTTppDnrrXR_139711rsGpUvvRfjhOcKQNX5KJlhH_9RC9sBbyQvv05mH5b-PDpMm6zBYHEu3Nusxuv9F_QGmAJ-5</recordid><startdate>20110115</startdate><enddate>20110115</enddate><creator>Lohn, Andrew J.</creator><creator>Li, Xuema</creator><creator>Kobayashi, Nobuhiko P.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20110115</creationdate><title>Epitaxial growth of ensembles of indium phosphide nanowires on various non-single crystal substrates using an amorphous template layer</title><author>Lohn, Andrew J. ; Li, Xuema ; Kobayashi, Nobuhiko P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c440t-1125130db9300f0d46480afa69868236eed5c22c149324b45f50fb8d86a58ae03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>A1. Nanostructures</topic><topic>A3. Metal organic vapor phase epitaxy</topic><topic>B1. Nanomaterials</topic><topic>B2. 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Structural and chemical properties of the nanowires were characterized by scanning electron microscopy, energy dispersive spectroscopy, and X-ray diffraction, elucidating the effect of varying the non-single crystal substrate on nanowire growth. A technique for growing InP nanowires on various non-single crystal substrates, including metals and dielectrics was demonstrated.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2010.08.050</doi><tpages>3</tpages></addata></record> |
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| ispartof | Journal of crystal growth, 2011-01, Vol.315 (1), p.157-159 |
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| language | eng |
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| source | Elsevier ScienceDirect Journals |
| subjects | A1. Nanostructures A3. Metal organic vapor phase epitaxy B1. Nanomaterials B2. Semiconducting III–V materials Cross-disciplinary physics: materials science rheology Crystal growth Crystal structure Crystals Diffraction Epitaxial growth Exact sciences and technology Indium phosphides Materials science Methods of deposition of films and coatings film growth and epitaxy Nanoscale materials and structures: fabrication and characterization Nanowires Other semiconductors Other topics in nanoscale materials and structures Physics Quantum wires Silicon substrates Specific materials Theory and models of film growth X-rays |
| title | Epitaxial growth of ensembles of indium phosphide nanowires on various non-single crystal substrates using an amorphous template layer |
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