Tunable Control over the Ionization State of Single Mn Acceptors in GaAs with Defect-Induced Band Bending

A scanning tunneling microscope was used to study the ionization of single Mn acceptors in GaAs(110). The ionization state switches when the GaAs valence band is bent across a Mn acceptor level. This produces a ringlike feature in STM images, whose diameter depends on the tunneling conditions and di...

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Veröffentlicht in:	Nano letters 2011-05, Vol.11 (5), p.2004-2007
Hauptverfasser:	Lee, Dong-Hun, Gupta, Jay A
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic structure of nanoscale materials : clusters, nanoparticles, nanotubes, and nanocrystals Exact sciences and technology Physics
Online-Zugang:	Volltext
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Zusammenfassung:	A scanning tunneling microscope was used to study the ionization of single Mn acceptors in GaAs(110). The ionization state switches when the GaAs valence band is bent across a Mn acceptor level. This produces a ringlike feature in STM images, whose diameter depends on the tunneling conditions and distance to charged arsenic vacancies. By varying the latter, we could tune the ionization switching, as well as quantify the contributions from tip- and vacancy-induced band bending.
ISSN:	1530-6984 1530-6992
DOI:	10.1021/nl2003686