Stretchable Field-Effect-Transistor Array of Suspended SnO2 Nanowires

Stretchable Field-Effect-Transistor Array of Suspended SnO2 Nanowires

Stretchable device systems with suspended SnO2 nanowires (NWs) as channel materials: Oxygen plasma is used to remove the underlying polymer to float the NWs. These suspended NW field‐effect transistors exhibit high electrical performance. By adopting a neutral mechanical plane and curved interconnec...

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Veröffentlicht in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2011-05, Vol.7 (9), p.1181-1185
Hauptverfasser: Shin, Gunchul, Yoon, Chang Hoon, Bae, Min Young, Kim, Yoon Chul, Hong, Sahng Ki, Rogers, John A., Ha, Jeong Sook
Format: Artikel
Sprache:eng
Schlagworte:
field-effect transistors
Nanotechnology
nanowires
Nanowires - chemistry
stretchable devices
suspended nanowires
Tin Compounds - chemistry
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Zusammenfassung:Stretchable device systems with suspended SnO2 nanowires (NWs) as channel materials: Oxygen plasma is used to remove the underlying polymer to float the NWs. These suspended NW field‐effect transistors exhibit high electrical performance. By adopting a neutral mechanical plane and curved interconnection, electrical performance of the suspended NW field‐effect transistors is maintained under stretching up to approximately 40%.
ISSN:1613-6810
1613-6829
DOI:10.1002/smll.201100116