Contact Doping and Ultrathin Gate Dielectrics for Nanoscale Organic Thin-Film Transistors
To suppress undesirable short‐channel effects in organic transistors with nanoscale lateral dimensions, aggressive gate‐dielectric scaling (using an ultra‐thin monolayer‐based gate dielectric) and area‐selective contact doping (using a strong organic dopant) are introduced into organic transistors w...
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| Veröffentlicht in: | Small (Weinheim an der Bergstrasse, Germany) Germany), 2011-05, Vol.7 (9), p.1186-1191 |
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| container_issue | 9 |
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| container_title | Small (Weinheim an der Bergstrasse, Germany) |
| container_volume | 7 |
| creator | Ante, Frederik Kälblein, Daniel Zschieschang, Ute Canzler, Tobias W. Werner, Ansgar Takimiya, Kazuo Ikeda, Masaaki Sekitani, Tsuyoshi Someya, Takao Klauk, Hagen |
| description | To suppress undesirable short‐channel effects in organic transistors with nanoscale lateral dimensions, aggressive gate‐dielectric scaling (using an ultra‐thin monolayer‐based gate dielectric) and area‐selective contact doping (using a strong organic dopant) are introduced into organic transistors with channel lengths and gate‐to‐contact overlaps of about 100 nm. These nanoscale organic transistors have off‐state drain currents below 1 pA, on/off current ratios near 107, and clean linear and saturation characteristics. |
| doi_str_mv | 10.1002/smll.201002254 |
| format | Article |
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| issn | 1613-6810 1613-6829 |
| language | eng |
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| source | MEDLINE; Wiley Online Library All Journals |
| subjects | contact doping contact resistance Nanotechnology - methods organic thin-film transistors transfer length Transistors, Electronic ultra-thin gate dielectrics |
| title | Contact Doping and Ultrathin Gate Dielectrics for Nanoscale Organic Thin-Film Transistors |
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