Contact Doping and Ultrathin Gate Dielectrics for Nanoscale Organic Thin-Film Transistors

To suppress undesirable short‐channel effects in organic transistors with nanoscale lateral dimensions, aggressive gate‐dielectric scaling (using an ultra‐thin monolayer‐based gate dielectric) and area‐selective contact doping (using a strong organic dopant) are introduced into organic transistors with channel lengths and gate‐to‐contact overlaps of about 100 nm. These nanoscale organic transistors have off‐state drain currents below 1 pA, on/off current ratios near 107, and clean linear and saturation characteristics.