Multilevel Data Storage Memory Devices Based on the Controlled Capacitive Coupling of Trapped Electrons

Multiple data storage memory devices based on the controlled capacitive coupling of trapped electrons are fabricated using highly ordered arrays of metal nanoparticles. Results are presented from metal nanoparticle‐based memory devices with controlled nanoparticle charge trapping elements, which undergo gate‐voltage‐adjustable multilevel memory states. Experimental and theoretical analysis for multilevel data manipulations and visualization of memory states are done on the nanometer scale.