Carrier relaxation dynamics in InAs/InGaAlAs quantum dashes

We characterize size-dependent carrier relaxation dynamics of partial laser structures containing quantum dashes by time-resolved degenerate four wave mixing between 1.2 and 1.6 μm.

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Bibliographische Detailangaben
Veröffentlicht in:	Journal of luminescence 2011-03, Vol.131 (3), p.486-488
Hauptverfasser:	Ryasnyanskiy, A.I., Biaggio, I., Tan, C.L., Djie, H.S., Ooi, B.S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Carrier dynamics Carriers Condensed matter: electronic structure, electrical, magnetic, and optical properties Dynamics Exact sciences and technology Four wave mixing Ii-vi semiconductors Indium arsenides Lasers Luminescence Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics Quantum dash Relaxation time
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Beschreibung
Zusammenfassung:	We characterize size-dependent carrier relaxation dynamics of partial laser structures containing quantum dashes by time-resolved degenerate four wave mixing between 1.2 and 1.6 μm.
ISSN:	0022-2313 1872-7883
DOI:	10.1016/j.jlumin.2010.09.047