Formation Mechanism of Micro Defect in Anisotropic Etching Analyzed by using Quasi-defect Pattern

Anisotropic wet etching for Si substrate is a key technology for manufacturing three dimensional structures for MEMS. It is important to understand a printability of defect during this etching process to create a complete design of MEMS structure. In this paper, an impact of quasi-defects on an etched structure is investigated. It is demonstrated that a minimum defect size which is not affect on the final structure is around a half of total etching depth.