Physical Foundation of a Recently Proposed Schottky-Contact Model

The goal of this correspondence is to supplement the Schottky-contact model proposed in "A Generalized Drift-Diffusion Model for Rectifying Schottky Contact Simulation," IEEE Transactions on Electron Devices, vol. 57, no. 7, July 2010, with a solid physical foundation by rigorously rederiv...

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Veröffentlicht in:	IEEE transactions on electron devices 2011-03, Vol.58 (3), p.874-875
1. Verfasser:	Schroeder, D
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Boltzmann transport equation Computer simulation Contact Current density Devices Distribution functions Drift Electric potential Electronics Equations Exact sciences and technology Foundations Interfaces Mathematical analysis Mathematical model Mathematical models Numerical models Schottky barriers semiconductor device modeling Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solids
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Beschreibung
Zusammenfassung:	The goal of this correspondence is to supplement the Schottky-contact model proposed in "A Generalized Drift-Diffusion Model for Rectifying Schottky Contact Simulation," IEEE Transactions on Electron Devices, vol. 57, no. 7, July 2010, with a solid physical foundation by rigorously rederiving it from an analytical solution of Boltzmann's equation in the boundary layer.
ISSN:	0018-9383 1557-9646
DOI:	10.1109/TED.2010.2093902