The preparation of Cu(In,Al)S2 films by direct reduction and sulfuration of the oxide precursors

The preparation of Cu(In,Al)S2 films by direct reduction and sulfuration of the oxide precursors

We report the preparation of Cu(In,Al)S2 (CIAS) films by direct reduction and sulfuration of the oxide precursors, and propose that this is a promising approach for application in solar cells. The CIAS films with a single chalcopyrite phase clearly show a "sandwich" structure. Typical near...

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Veröffentlicht in:Scripta materialia 2011-03, Vol.64 (5), p.422-425
Hauptverfasser: Luo, Paifeng, Yu, Penghan, Zuo, Ruzhong, Jin, Jiao, Xu, Yongyuan, Ding, Yuankui, Song, Junda
Format: Artikel
Sprache:eng
Schlagworte:
Alloying
Chalcopyrite
Direct reduction
Energy bands
Gaps
Oxides
Precursors
Solar cells
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Zusammenfassung:We report the preparation of Cu(In,Al)S2 (CIAS) films by direct reduction and sulfuration of the oxide precursors, and propose that this is a promising approach for application in solar cells. The CIAS films with a single chalcopyrite phase clearly show a "sandwich" structure. Typical near-stoichiometric slightly S-poor films with two energy band gaps (Eg 1 =1.0eV, Eg 2 =1.4eV) are also obtained, which shows that the sulfuration process is incomplete and that the Eg can be increased by alloying aluminum and sulfur.
ISSN:1359-6462
DOI:10.1016/j.scriptamat.2010.11.002