n-Type polycrystalline (CdZn)Se photoelectrode synthesis and its photoelectrochemical characterizations
▶ The various properties of the CdZnSe thin films was discussed from point of applications based on PEC. ▶ The various parameters of PEC cells are determined. Cd 1− x Zn x Se photoelectrode have been synthesized by chemical bath deposition method. (CdZn)Se photoelectrode acts as photoanode. The cell...
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Veröffentlicht in: | Journal of alloys and compounds 2010-09, Vol.506 (2), p.673-677 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
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Zusammenfassung: | ▶ The various properties of the CdZnSe thin films was discussed from point of applications based on PEC. ▶ The various parameters of PEC cells are determined.
Cd
1−
x
Zn
x
Se photoelectrode have been synthesized by chemical bath deposition method. (CdZn)Se photoelectrode acts as photoanode. The cell configuration is n-CdZnSe|NaOH (1
M)
+
S (1
M)
+
Na
2S (1
M)|C
(graphite). It is found that fill factor and efficiency are maximum for Cd
0.9Zn
0.1Se. This is due to low resistance, high flat band potential, maximum open circuit voltage as well as maximum short circuit current. The lighted ideality factor was found to be minimum for Cd
0.9Zn
0.1Se photoelectrode. A cell utilizing photoelectrode showed a wider spectral response. |
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ISSN: | 0925-8388 1873-4669 |
DOI: | 10.1016/j.jallcom.2010.07.040 |