Effect of annealing on structural and optoelectronic properties of nanostructured ZnSe thin films

▶ Prepared good quality ZnSe films by commercially viable deposition technique. ▶ ZnSe films were thoroughly characterized by several techniques. ▶ It is shown that by simply annealing one can regulate several structural, optical and electrical properties of ZnSe film. ▶ The reported results are useful for the designing of optoelectronic devices, optical coatings for infrared applications and window layer of the solar cells. Thin films of ZnSe were deposited on soda lime glass substrates by thermal evaporation and annealed in vacuum at various temperatures in the range of 100–300 °C. Structural and optoelectronic properties of these films were investigated and compared with the available data. XRD studies revealed that as-deposited films were polycrystalline in nature with cubic structure. It was further observed that the grain size and crystallinity increased, whereas dislocations and strains decreased with the increase of annealing temperature. The optical energy band gap estimated from the transmittance data was in the range of 2.60–2.67 eV. The observed increase in band gap energy with annealing temperature may be due to the quantum confinement effects. Similarly, refractive index of the films was found to increase with the annealing temperature. The AFM images revealed that films were uniform and pinhole free. The RMS roughness of the films increased from 1.5 nm to 2.5 nm with the increase of annealing temperature. Resistivity of the films decreased linearly with the increase of temperature.