Identification of atomic steps at AlSb/GaAs hetero-epitaxial interface using geometric phase method by high-resolution electron microscopy

Geometric phase analysis (GPA) is applied to determining the strain fields in AlSb/GaAs hetero-epitaxial film from high-resolution electron microscopy (HREM) images. The misfit dislocations along the hetero-interface are shown to be predominantly 90° Lomer dislocations. The epitaxial film is almost...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Materials letters 2011-02, Vol.65 (3), p.456-459
Hauptverfasser: He, X.Q., Wen, C., Duan, X.F., Chen, H.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Geometric phase analysis (GPA) is applied to determining the strain fields in AlSb/GaAs hetero-epitaxial film from high-resolution electron microscopy (HREM) images. The misfit dislocations along the hetero-interface are shown to be predominantly 90° Lomer dislocations. The epitaxial film is almost fully relaxed by a high density of misfit dislocations. The 90° Lomer dislocations are assumed to be formed by either recombination of two 60° mixed misfit dislocations through a glide and climb process or direct nucleation at the interface. The atomic steps (ASs) are visualized in the strain map, providing a new method for identifying the ASs at the interface.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2010.10.054