Transport properties of nanoperforated Nb thin films

Transport properties of nanoperforated Nb thin films

Porous silicon, obtained by electrochemical etching, has been used as a substrate for the growth of nanoperforated Nb thin films. The films, deposited by UHV magnetron sputtering, inherited from the Si substrates their structure, made of holes of 10 nm diameter and of 20 and 40 nm spacing, which pro...

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Veröffentlicht in:Physica. C, Superconductivity Superconductivity, 2010-10, Vol.470 (19), p.957-959
Hauptverfasser: Trezza, M., Cirillo, C., Prischepa, S.L., Attanasio, C.
Format: Artikel
Sprache:eng
Schlagworte:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Flux pinning
Lattices
Magnetron sputtering
Nanocomposites
Nanomaterials
Nanostructure
Niobium
Physics
Porous silicon
Properties of type I and type II superconductors
Silicon substrates
Superconductivity
Thin films
Vortex lattices
Vortex lattices ,flux pinning, flux creep
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Zusammenfassung:Porous silicon, obtained by electrochemical etching, has been used as a substrate for the growth of nanoperforated Nb thin films. The films, deposited by UHV magnetron sputtering, inherited from the Si substrates their structure, made of holes of 10 nm diameter and of 20 and 40 nm spacing, which provide an artificial pinning lattice. Commensurability effects between the Abrikosov vortex lattice and the artificial array of holes were investigated by transport measurements.
ISSN:0921-4534
1873-2143
DOI:10.1016/j.physc.2010.02.078